@article {142,
	title = {Scaling down lateral dimensions of silicon nanopillars fabricated by reactive ion etching with Au/Cr self-assembled clusters as an etch mask.},
	journal = {Thin Solid Films},
	volume = {520},
	year = {2012},
	note = {CAPLUS AN 2012:110019(Journal; Online Computer File)},
	month = {2012///},
	pages = {2041 - 2045},
	publisher = {Elsevier B.V.},
	abstract = {Nanodot and nanopillar structures and precisely controlled reproducible fabrication thereof are of great interest in common nanoelectronic devices, including photonic crystals and surface plasmon resonance instruments.  In this work, fabrication process of the silicon nanopillar structures is described.  It includes self-organization of gold and chromium clusters at thickness close to that of one at. diam. to serve as etching masks followed by the reactive ion etching to form silicon nanopillars.  SEM and XPS were used to characterize self-organized gold and chromium clusters as well as the final silicon nanopillars.  This method was found to produce silicon nanopillars of sub-10 nm lateral dimensions and the diam.-to-height aspect ratio of up to 1:14. [on SciFinder(R)]},
	keywords = {silicon nanopillar reactive ion etching gold chromium cluster},
	isbn = {0040-6090},
	author = {Kaliasas, R. and Baltrusaitis, J. and Mikolajunas, M. and Jakucionis, L. and Virzonis, D.}
}
@article {175,
	title = {Plasma etching of virtually stress-free stacked silicon nitride films.},
	journal = {Thin Solid Films},
	volume = {517},
	year = {2009},
	note = {CAPLUS AN 2009:661551(Journal)},
	month = {2009///},
	pages = {5769 - 5772},
	publisher = {Elsevier B.V.},
	abstract = {Stacked silicon nitride films for use in manufg. of surface micromachined membranes were deposited using custom made plasma-enhanced chem. vapor deposition instrument with silane (SiH4) and ammonia (NH3) gas mixt. as deposition precursor.  Deposition conditions were adjusted by varying substrate temp. and SiH4:NH3 flow ratio and temp. to obtain the required stress related and elec. properties of the membranes.  Transmission FTIR spectroscopy and SEM were used to investigate the chem. compn. and morphol. of the stacked film components.  An increase in the SiH4:NH3 flow ratio and a decrease in temp. resulted in a silicon-rich silicon nitride film, as well as an increased silicon oxide concn.  To avoid under-etch and sidewall defects, the plasma power d. during the plasma etching was changed from 0.5 W/cm2 during the etching of both top and bottom layers in a stacked film, to 1.0 W/cm2 during the etching of the middle both silicon and silicon oxide-rich film.  This resulted in an improved overall stacked film sidewall quality and reduced the unwanted under-etch. [on SciFinder(R)]},
	keywords = {stacked silicon nitride film CVD plasma etching property MEMS},
	isbn = {0040-6090},
	author = {Mikolajunas, M. and Baltrusaitis, J. and Kopustinskas, V. and Vanagas, G. and Grigaliunas, V. and Virzonis, D.}
}
@article {178,
	title = {A study of stacked PECVD silicon nitride films used for surface micromachined membranes.},
	journal = {Thin Solid Films},
	volume = {516},
	year = {2008},
	note = {CAPLUS AN 2008:1086703(Journal)},
	month = {2008///},
	pages = {8788 - 8792},
	publisher = {Elsevier B.V.},
	abstract = {Silicon nitride stacked films contg. three layers differing in mech.-chem. properties are synthesized using plasma-enhanced chem. vapor deposition method from monosilane (SiH4) and ammonia (NH3) mixt.  The compn. is analyzed using XPS and stress is measured using a substrate bending method.  The ability to obtain stacked films with the custom tensile stress in the overall structure was demonstrated by the series of expts.  The tensile stress in the top and bottom films was obtained between 200 and 300 MPa whereas the stress in the middle film could be adjusted from compressive 60 MPa to tensile 300 MPa.  Since the appropriate stress value is important in achieving required mech. properties of the membranes, the results obtained are discussed in the context of surface micromachined membrane structures. [on SciFinder(R)]},
	keywords = {plasma CVD stacked silicon nitride film surface micromachined membrane},
	isbn = {0040-6090},
	author = {Mikolajunas, M. and Kaliasas, R. and Andrulevicius, M. and Grigaliunas, V. and Baltrusaitis, J. and Virzonis, D.}
}
@article {179,
	title = {A thin chromium film formation monitoring method: Monitoring of the early stages.},
	journal = {Thin Solid Films},
	volume = {516},
	year = {2008},
	note = {CAPLUS AN 2008:275961(Journal)},
	month = {2008///},
	pages = {2943 - 2947},
	publisher = {Elsevier B.V.},
	abstract = {A method to monitor thin film deposition on insulating and semiconductive substrates based on the surface cond. measurements is proposed.  This method differs from previous thin film cond. measurement methods by the absence of an external power source.  Instead, it employs natural charges carried by ions and electrons that are present in a vapor that is deposited.  The ability to monitor thin film cond., starting with early nucleation stages up to the formation of the integrally conductive film is shown by a comparison of in-situ recorded voltage changes and ex-situ by XPS and at. force microscopy anal. of the stepwise covered samples.  Repeatability of the exptl. data was within a {\textpm} 25\% interval at the exptl. parameter region where an integrally conductive film starts to form. [on SciFinder(R)]},
	keywords = {chromium thin film formation monitoring surface cond},
	isbn = {0040-6090},
	author = {Jukna, T. and Baltrusaitis, J. and Sinkevicius, V. and Virzonis, D.}
}
