@article {70,
	title = {Phase Composition of Aqueous Urea-Ammonium Nitrate (UAN)-Zinc Nitrate Solutions for Sustainable Reuse of Zinc Containing Industrial Pigment Waste.},
	journal = {ACS Sustainable Chemistry \& Engineering},
	volume = {3},
	year = {2015},
	note = {CAPLUS AN 2015:494326(Journal; Online Computer File)},
	pages = {950 - 958},
	publisher = {American Chemical Society},
	abstract = {Sustainable metal recovery from waste is of utmost importance.  Zn is a micronutrient that is abundant in many industrial wastes.  In this work, the process of converting industrial white pigment waste into a Zn micronutrient contg. nitrogen fertilizers was developed utilizing an HNO3 extn. method.  For this purpose, soly. diagrams, polytherms, were constructed of the ternary CO(NH2)2-Zn(NO3)2-H2O and NH4NO3-Zn(NO3)2-H2O systems to det. the corresponding phase equil. and solid material chem. compn.  Complex salts contg. Zn and two and four urea mols. were obsd. and the catalytic Zn(NO3)2 effect was obsd. at the decompn. temp. of CO(NH2)2 during thermal anal.  Two cryst. phases of NH4NO3, namely III and IV, were obsd. and the corresponding transition temp. decreased with increasing Zn(NO3)2 concn. in soln.  Zn extn. in the form of sol. Zn(NO3)2 was performed from the white pigment industrial waste and optimal extn. parameters including HNO3 concn., stoichiometric amt. and temp. were detd.  These included a 60 {\textdegree}C soln. temp., 55\% HNO3 concn. and 140\% of stoichiometric HNO3 amt.  This agreed well with the reactive conditions currently used in nitrophosphate fertilizer prodn. potentially enabling direct prodn. of micronutrient contg. NP fertilizers without significant technol. modification.  Sensible compns. of UAN-28 and UAN-30 liq. fertilizers contg. Zn micronutrient from industrial grade compds. and pigment waste extd. Zn(NO3)2 were obtained and their physicochem. properties were measured. [on SciFinder(R)]},
	keywords = {zinc nitrate ammonium urea waste},
	isbn = {2168-0485},
	author = {Baltrusaitis, J. and Sviklas, A. M.}
}
@article {112,
	title = {Polyvinylpyrrolidone surface modification with SiOx containing amorphous hydrogenated carbon (a-C:H/SiOx) and nitrogen-doped a-C:H/SiOx films using Hall-type closed drift ion beam source.},
	journal = {Thin Solid Films},
	volume = {538},
	year = {2013},
	note = {CAPLUS AN 2012:1904654(Journal; Online Computer File)},
	pages = {25 - 31},
	publisher = {Elsevier B.V.},
	abstract = {In this study SiOx contg. amorphous hydrogenated C (a-C:H/SiOx) and N-doped a-C:H/SiOx (a-C:H:N/SiOx) films were deposited on polyvinylpyrrolidone (PVP) templates of variable thickness using a Hall-type closed drift ion beam source with const. irradn. parameters.  A detailed surface characterization was followed using at. force microscopy (AFM) topog. images, surface morphol. parameters, height distribution histograms and bearing ratio curves with hybrid parameters.  The AFM anal. directly showed that the a-C:H/SiOx/PVP and a-C:H:N/SiOx/PVP composite films represent different morphologies with characteristic surface textures.  Surface adhesive properties were evaluated by measuring the force required to sep. the AFM tip from the surface by AFM force-distance curves.  The variance in adhesion force detected was lower for a-C:H/SiOx/PVP composite films due to lower structural homogeneity of the surfaces.  FTIR spectroscopy anal. was performed to study the blend behavior of PVP upon a-C:H/SiOx and a-C:H:N/SiOx direct ion beam deposition.  Interfacial interactions of PVP with the direct ion beam induced changes in the carbonyl group of the PVP and are dependent on the carrier gas used for the synthesis of the amorphous hydrogenated C films. [on SciFinder(R)]},
	keywords = {ion beam, polyvinylpyrrolidone PVP surface modification amorphous carbon silicon oxide},
	isbn = {0040-6090},
	author = {Lazauskas, A. and Grigaliunas, V. and Guobiene, A. and Puiso, J. and Prosycevas, I. and Baltrusaitis, J.}
}
@article {169,
	title = {Principles of electrochemical reduction of Na2MoO4 on a Se/SnO2/glass surface.},
	journal = {Chemine Technologija (Kaunas, Lithuania)},
	year = {2010},
	note = {CAPLUS AN 2010:548442(Journal)},
	month = {2010///},
	pages = {28 - 35},
	publisher = {Technologija},
	abstract = {Na2MoO4 electrochem. redn. from 0.22 mol/dm3 sodium citrate supporting soln. was investigated by the cyclic voltammetry, XPS and lateral force microscopy techniques.  Exptl. results have indicated that molybdenum oxide is initially deposited on the Se/SnO2/glass surface in a potential range from -0.20 V to -0.80 V.  XPS anal. exhibited the molybdenum oxide stoichiometry of 2.9.  The nucleation mechanism of MoOx onto Se/SnO2/glass surface was investigated by the current transient technique.  The deposition transients analyzed in the non-dimensional plots I2/I2m = f(t/tm) and I2/I2m = f(t/tm)2 have shown that MoOx nucleates according to a progressive mechanism.  The nucleation rate depends on Na2MoO4 concn. in the supporting electrolyte and on the deposition potential. [on SciFinder(R)]},
	keywords = {sodium molybdate electrochem redn tin dioxide selenium glass surface},
	isbn = {1392-1231},
	author = {Sinkeviciute, D. and Dukstiene, N. and Baltrusaitis, J. and Guobiene, A.}
}
@article {175,
	title = {Plasma etching of virtually stress-free stacked silicon nitride films.},
	journal = {Thin Solid Films},
	volume = {517},
	year = {2009},
	note = {CAPLUS AN 2009:661551(Journal)},
	month = {2009///},
	pages = {5769 - 5772},
	publisher = {Elsevier B.V.},
	abstract = {Stacked silicon nitride films for use in manufg. of surface micromachined membranes were deposited using custom made plasma-enhanced chem. vapor deposition instrument with silane (SiH4) and ammonia (NH3) gas mixt. as deposition precursor.  Deposition conditions were adjusted by varying substrate temp. and SiH4:NH3 flow ratio and temp. to obtain the required stress related and elec. properties of the membranes.  Transmission FTIR spectroscopy and SEM were used to investigate the chem. compn. and morphol. of the stacked film components.  An increase in the SiH4:NH3 flow ratio and a decrease in temp. resulted in a silicon-rich silicon nitride film, as well as an increased silicon oxide concn.  To avoid under-etch and sidewall defects, the plasma power d. during the plasma etching was changed from 0.5 W/cm2 during the etching of both top and bottom layers in a stacked film, to 1.0 W/cm2 during the etching of the middle both silicon and silicon oxide-rich film.  This resulted in an improved overall stacked film sidewall quality and reduced the unwanted under-etch. [on SciFinder(R)]},
	keywords = {stacked silicon nitride film CVD plasma etching property MEMS},
	isbn = {0040-6090},
	author = {Mikolajunas, M. and Baltrusaitis, J. and Kopustinskas, V. and Vanagas, G. and Grigaliunas, V. and Virzonis, D.}
}
