@article {112,
	title = {Polyvinylpyrrolidone surface modification with SiOx containing amorphous hydrogenated carbon (a-C:H/SiOx) and nitrogen-doped a-C:H/SiOx films using Hall-type closed drift ion beam source.},
	journal = {Thin Solid Films},
	volume = {538},
	year = {2013},
	note = {CAPLUS AN 2012:1904654(Journal; Online Computer File)},
	pages = {25 - 31},
	publisher = {Elsevier B.V.},
	abstract = {In this study SiOx contg. amorphous hydrogenated C (a-C:H/SiOx) and N-doped a-C:H/SiOx (a-C:H:N/SiOx) films were deposited on polyvinylpyrrolidone (PVP) templates of variable thickness using a Hall-type closed drift ion beam source with const. irradn. parameters.  A detailed surface characterization was followed using at. force microscopy (AFM) topog. images, surface morphol. parameters, height distribution histograms and bearing ratio curves with hybrid parameters.  The AFM anal. directly showed that the a-C:H/SiOx/PVP and a-C:H:N/SiOx/PVP composite films represent different morphologies with characteristic surface textures.  Surface adhesive properties were evaluated by measuring the force required to sep. the AFM tip from the surface by AFM force-distance curves.  The variance in adhesion force detected was lower for a-C:H/SiOx/PVP composite films due to lower structural homogeneity of the surfaces.  FTIR spectroscopy anal. was performed to study the blend behavior of PVP upon a-C:H/SiOx and a-C:H:N/SiOx direct ion beam deposition.  Interfacial interactions of PVP with the direct ion beam induced changes in the carbonyl group of the PVP and are dependent on the carrier gas used for the synthesis of the amorphous hydrogenated C films. [on SciFinder(R)]},
	keywords = {ion beam, polyvinylpyrrolidone PVP surface modification amorphous carbon silicon oxide},
	isbn = {0040-6090},
	author = {Lazauskas, A. and Grigaliunas, V. and Guobiene, A. and Puiso, J. and Prosycevas, I. and Baltrusaitis, J.}
}
@article {175,
	title = {Plasma etching of virtually stress-free stacked silicon nitride films.},
	journal = {Thin Solid Films},
	volume = {517},
	year = {2009},
	note = {CAPLUS AN 2009:661551(Journal)},
	month = {2009///},
	pages = {5769 - 5772},
	publisher = {Elsevier B.V.},
	abstract = {Stacked silicon nitride films for use in manufg. of surface micromachined membranes were deposited using custom made plasma-enhanced chem. vapor deposition instrument with silane (SiH4) and ammonia (NH3) gas mixt. as deposition precursor.  Deposition conditions were adjusted by varying substrate temp. and SiH4:NH3 flow ratio and temp. to obtain the required stress related and elec. properties of the membranes.  Transmission FTIR spectroscopy and SEM were used to investigate the chem. compn. and morphol. of the stacked film components.  An increase in the SiH4:NH3 flow ratio and a decrease in temp. resulted in a silicon-rich silicon nitride film, as well as an increased silicon oxide concn.  To avoid under-etch and sidewall defects, the plasma power d. during the plasma etching was changed from 0.5 W/cm2 during the etching of both top and bottom layers in a stacked film, to 1.0 W/cm2 during the etching of the middle both silicon and silicon oxide-rich film.  This resulted in an improved overall stacked film sidewall quality and reduced the unwanted under-etch. [on SciFinder(R)]},
	keywords = {stacked silicon nitride film CVD plasma etching property MEMS},
	isbn = {0040-6090},
	author = {Mikolajunas, M. and Baltrusaitis, J. and Kopustinskas, V. and Vanagas, G. and Grigaliunas, V. and Virzonis, D.}
}
