<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Kaliasas, R.</style></author><author><style face="normal" font="default" size="100%">Baltrusaitis, J.</style></author><author><style face="normal" font="default" size="100%">Mikolajunas, M.</style></author><author><style face="normal" font="default" size="100%">Jakucionis, L.</style></author><author><style face="normal" font="default" size="100%">Virzonis, D.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Scaling down lateral dimensions of silicon nanopillars fabricated by reactive ion etching with Au/Cr self-assembled clusters as an etch mask.</style></title><secondary-title><style face="normal" font="default" size="100%">Thin Solid Films</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">silicon nanopillar reactive ion etching gold chromium cluster</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2012</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2012///</style></date></pub-dates></dates><publisher><style face="normal" font="default" size="100%">Elsevier B.V.</style></publisher><volume><style face="normal" font="default" size="100%">520</style></volume><pages><style face="normal" font="default" size="100%">2041 - 2045</style></pages><isbn><style face="normal" font="default" size="100%">0040-6090</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Nanodot and nanopillar structures and precisely controlled reproducible fabrication thereof are of great interest in common nanoelectronic devices, including photonic crystals and surface plasmon resonance instruments.  In this work, fabrication process of the silicon nanopillar structures is described.  It includes self-organization of gold and chromium clusters at thickness close to that of one at. diam. to serve as etching masks followed by the reactive ion etching to form silicon nanopillars.  SEM and XPS were used to characterize self-organized gold and chromium clusters as well as the final silicon nanopillars.  This method was found to produce silicon nanopillars of sub-10 nm lateral dimensions and the diam.-to-height aspect ratio of up to 1:14. [on SciFinder(R)]</style></abstract><issue><style face="normal" font="default" size="100%">6</style></issue><notes><style face="normal" font="default" size="100%">CAPLUS AN 2012:110019(Journal; Online Computer File)</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Mikolajunas, M.</style></author><author><style face="normal" font="default" size="100%">Baltrusaitis, J.</style></author><author><style face="normal" font="default" size="100%">Kopustinskas, V.</style></author><author><style face="normal" font="default" size="100%">Vanagas, G.</style></author><author><style face="normal" font="default" size="100%">Grigaliunas, V.</style></author><author><style face="normal" font="default" size="100%">Virzonis, D.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Plasma etching of virtually stress-free stacked silicon nitride films.</style></title><secondary-title><style face="normal" font="default" size="100%">Thin Solid Films</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">stacked silicon nitride film CVD plasma etching property MEMS</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2009</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2009///</style></date></pub-dates></dates><publisher><style face="normal" font="default" size="100%">Elsevier B.V.</style></publisher><volume><style face="normal" font="default" size="100%">517</style></volume><pages><style face="normal" font="default" size="100%">5769 - 5772</style></pages><isbn><style face="normal" font="default" size="100%">0040-6090</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Stacked silicon nitride films for use in manufg. of surface micromachined membranes were deposited using custom made plasma-enhanced chem. vapor deposition instrument with silane (SiH4) and ammonia (NH3) gas mixt. as deposition precursor.  Deposition conditions were adjusted by varying substrate temp. and SiH4:NH3 flow ratio and temp. to obtain the required stress related and elec. properties of the membranes.  Transmission FTIR spectroscopy and SEM were used to investigate the chem. compn. and morphol. of the stacked film components.  An increase in the SiH4:NH3 flow ratio and a decrease in temp. resulted in a silicon-rich silicon nitride film, as well as an increased silicon oxide concn.  To avoid under-etch and sidewall defects, the plasma power d. during the plasma etching was changed from 0.5 W/cm2 during the etching of both top and bottom layers in a stacked film, to 1.0 W/cm2 during the etching of the middle both silicon and silicon oxide-rich film.  This resulted in an improved overall stacked film sidewall quality and reduced the unwanted under-etch. [on SciFinder(R)]</style></abstract><issue><style face="normal" font="default" size="100%">19</style></issue><notes><style face="normal" font="default" size="100%">CAPLUS AN 2009:661551(Journal)</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Mikolajunas, M.</style></author><author><style face="normal" font="default" size="100%">Kaliasas, R.</style></author><author><style face="normal" font="default" size="100%">Andrulevicius, M.</style></author><author><style face="normal" font="default" size="100%">Grigaliunas, V.</style></author><author><style face="normal" font="default" size="100%">Baltrusaitis, J.</style></author><author><style face="normal" font="default" size="100%">Virzonis, D.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">A study of stacked PECVD silicon nitride films used for surface micromachined membranes.</style></title><secondary-title><style face="normal" font="default" size="100%">Thin Solid Films</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">plasma CVD stacked silicon nitride film surface micromachined membrane</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2008</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2008///</style></date></pub-dates></dates><publisher><style face="normal" font="default" size="100%">Elsevier B.V.</style></publisher><volume><style face="normal" font="default" size="100%">516</style></volume><pages><style face="normal" font="default" size="100%">8788 - 8792</style></pages><isbn><style face="normal" font="default" size="100%">0040-6090</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Silicon nitride stacked films contg. three layers differing in mech.-chem. properties are synthesized using plasma-enhanced chem. vapor deposition method from monosilane (SiH4) and ammonia (NH3) mixt.  The compn. is analyzed using XPS and stress is measured using a substrate bending method.  The ability to obtain stacked films with the custom tensile stress in the overall structure was demonstrated by the series of expts.  The tensile stress in the top and bottom films was obtained between 200 and 300 MPa whereas the stress in the middle film could be adjusted from compressive 60 MPa to tensile 300 MPa.  Since the appropriate stress value is important in achieving required mech. properties of the membranes, the results obtained are discussed in the context of surface micromachined membrane structures. [on SciFinder(R)]</style></abstract><issue><style face="normal" font="default" size="100%">23</style></issue><notes><style face="normal" font="default" size="100%">CAPLUS AN 2008:1086703(Journal)</style></notes></record></records></xml>