<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Kaliasas, R.</style></author><author><style face="normal" font="default" size="100%">Baltrusaitis, J.</style></author><author><style face="normal" font="default" size="100%">Mikolajunas, M.</style></author><author><style face="normal" font="default" size="100%">Jakucionis, L.</style></author><author><style face="normal" font="default" size="100%">Virzonis, D.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Scaling down lateral dimensions of silicon nanopillars fabricated by reactive ion etching with Au/Cr self-assembled clusters as an etch mask.</style></title><secondary-title><style face="normal" font="default" size="100%">Thin Solid Films</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">silicon nanopillar reactive ion etching gold chromium cluster</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2012</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2012///</style></date></pub-dates></dates><publisher><style face="normal" font="default" size="100%">Elsevier B.V.</style></publisher><volume><style face="normal" font="default" size="100%">520</style></volume><pages><style face="normal" font="default" size="100%">2041 - 2045</style></pages><isbn><style face="normal" font="default" size="100%">0040-6090</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Nanodot and nanopillar structures and precisely controlled reproducible fabrication thereof are of great interest in common nanoelectronic devices, including photonic crystals and surface plasmon resonance instruments.  In this work, fabrication process of the silicon nanopillar structures is described.  It includes self-organization of gold and chromium clusters at thickness close to that of one at. diam. to serve as etching masks followed by the reactive ion etching to form silicon nanopillars.  SEM and XPS were used to characterize self-organized gold and chromium clusters as well as the final silicon nanopillars.  This method was found to produce silicon nanopillars of sub-10 nm lateral dimensions and the diam.-to-height aspect ratio of up to 1:14. [on SciFinder(R)]</style></abstract><issue><style face="normal" font="default" size="100%">6</style></issue><notes><style face="normal" font="default" size="100%">CAPLUS AN 2012:110019(Journal; Online Computer File)</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Mikolajunas, M.</style></author><author><style face="normal" font="default" size="100%">Kaliasas, R.</style></author><author><style face="normal" font="default" size="100%">Andrulevicius, M.</style></author><author><style face="normal" font="default" size="100%">Grigaliunas, V.</style></author><author><style face="normal" font="default" size="100%">Baltrusaitis, J.</style></author><author><style face="normal" font="default" size="100%">Virzonis, D.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">A study of stacked PECVD silicon nitride films used for surface micromachined membranes.</style></title><secondary-title><style face="normal" font="default" size="100%">Thin Solid Films</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">plasma CVD stacked silicon nitride film surface micromachined membrane</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2008</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2008///</style></date></pub-dates></dates><publisher><style face="normal" font="default" size="100%">Elsevier B.V.</style></publisher><volume><style face="normal" font="default" size="100%">516</style></volume><pages><style face="normal" font="default" size="100%">8788 - 8792</style></pages><isbn><style face="normal" font="default" size="100%">0040-6090</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Silicon nitride stacked films contg. three layers differing in mech.-chem. properties are synthesized using plasma-enhanced chem. vapor deposition method from monosilane (SiH4) and ammonia (NH3) mixt.  The compn. is analyzed using XPS and stress is measured using a substrate bending method.  The ability to obtain stacked films with the custom tensile stress in the overall structure was demonstrated by the series of expts.  The tensile stress in the top and bottom films was obtained between 200 and 300 MPa whereas the stress in the middle film could be adjusted from compressive 60 MPa to tensile 300 MPa.  Since the appropriate stress value is important in achieving required mech. properties of the membranes, the results obtained are discussed in the context of surface micromachined membrane structures. [on SciFinder(R)]</style></abstract><issue><style face="normal" font="default" size="100%">23</style></issue><notes><style face="normal" font="default" size="100%">CAPLUS AN 2008:1086703(Journal)</style></notes></record></records></xml>