<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ancutiene, Ingrida</style></author><author><style face="normal" font="default" size="100%">Navea, Juan G.</style></author><author><style face="normal" font="default" size="100%">Baltrusaitis, Jonas.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Structural, chemical and optical properties of the polyethylene-copper sulfide composite thin films synthesized using polythionic acid as sulfur source.</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Surface Science</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">photovoltaic property copper sulfide thin film</style></keyword><keyword><style  face="normal" font="default" size="100%">polyethylene copper sulfide thin film optical property</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2015</style></year></dates><publisher><style face="normal" font="default" size="100%">Elsevier B.V.</style></publisher><volume><style face="normal" font="default" size="100%">347</style></volume><pages><style face="normal" font="default" size="100%">520 - 527</style></pages><isbn><style face="normal" font="default" size="100%">0169-4332</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Synthesis and properties of thin copper sulfide films deposited on polyethylene were explored for the development of low cost hybrid org.-inorg. photovoltaic materials.  Polyethylene was used as a model org. host material for thin copper sulfide film formation.  Adsorption-diffusion method was used which utilized consecutive exposure of polyethylene to polythionic acid followed by aq. Cu(II/I) soln.  Several cryst. copper sulfide phases were obtained in synthesized samples and elucidated using X-ray diffraction.  Surface chem. compn. detd. using XPS showed the presence of copper sulfides in combination with copper hydroxide.  Thickness of the composite material films ranged from several microns to ∼18 μm and depended on the Cu(II/I) exposure time.  Band gap of the materials obtained was measured and ranged from 1.88 to 1.17 eV.  Importantly, heating these complex copper sulfide cryst. phase contg. films at 100 °C in inert atm. invariably resulted in a single copper sulfide, anilite (Cu1.75S), phase.  Anilite possesses a bandgap of 1.36 eV and has demonstrated excellent photovoltaic properties.  Thus, the method described in this work can be used for a low cost large scale composite thin film photovoltaic material deposition based on anilite as photoactive material. [on SciFinder(R)]</style></abstract><notes><style face="normal" font="default" size="100%">CAPLUS AN 2015:735335(Journal; Online Computer File)</style></notes></record></records></xml>